PMV100EPA Automotive MOSFETs от Nexperia

Indicates whether the component is compatible with wave soldering processes. Check this attribute to ensure your assembly method matches the component's solderability and thermal limits, preventing damage during manufacturing.

Indicates whether the component supports reflow soldering, a common surface-mount assembly process. Check this attribute to ensure compatibility with your PCB manufacturing line and avoid thermal damage during assembly.

Specifies the packaging method for the component, such as tape and reel, tube, tray, or bulk. Packaging affects handling, storage, and assembly processes. Verify the packing type against your production requirements and the datasheet to ensure compatibility with your pick-and-place equipment.

Marking is the code printed on the component body, used for identification and traceability. It often encodes part number, date code, or lot information. Verify it against the datasheet to confirm the exact variant and manufacturing details.

Indicates whether the component meets the EU Restriction of Hazardous Substances directive. Check this attribute to ensure regulatory compliance for your target market. Verify the latest RoHS status in the datasheet or certificate, as exemptions may apply.

Shows whether the component meets RoHS, halogen-free, and REACH requirements. Buyers and engineers use this to verify environmental compliance for global shipping and regulatory approval. Always confirm the latest certification status in the datasheet or compliance document.

The exact part number to use when placing an order. It may include packaging or configuration suffixes. Always verify this matches the datasheet and your BOM to avoid procurement errors.

Specifies the chemical substances present in the component, such as lead, halogens, or other restricted materials. Buyers use this to verify environmental compliance and regulatory requirements. Always cross-check with the manufacturer's datasheet or material declaration for accurate and up-to-date information.

Specifies the electrical channel configuration, such as unidirectional or bidirectional, for signal or power routing. This attribute is critical for selecting components like multiplexers, isolators, or level shifters. Verify the channel type against your application requirements and the datasheet to ensure correct signal flow and compatibility.

Specifies the electrical channel configuration, such as unidirectional or bidirectional, for signal or power routing. This attribute is critical for selecting components like multiplexers, isolators, or level shifters. Verify the channel type against your application requirements and the datasheet to ensure correct signal flow and compatibility.

Specifies which standards, sockets, or mating connectors this component supports. Check this field to ensure the part fits your design's physical and electrical requirements. Always verify against the datasheet for exact compliance details.

Indicates how quickly a semiconductor device transitions between on and off states. Critical for high-frequency power conversion and digital logic. Compare rise, fall, and delay times from the datasheet to ensure your circuit meets timing and efficiency requirements.

Specifies the total count of individual transistor die or chips integrated within a single component package. This is critical for multi-transistor arrays, Darlington pairs, or modules. Verify against the datasheet to ensure the package meets your circuit design requirements for channel count and configuration.

Specifies how many individual transistor die are contained within a single component package. This is critical for multi-transistor arrays, dual or quad configurations, and integrated driver circuits. Verify against the datasheet to ensure the package matches your circuit design requirements.

Maximum junction temperature is the highest allowable operating temperature of the semiconductor die. Exceeding it can cause thermal damage or reduced reliability. Compare this limit with your application's worst-case thermal conditions and verify against the datasheet's thermal specifications.

Lifecycle status of the product, such as active, obsolete, or end-of-life. This affects long-term availability and design reliability. For production, choose active products to ensure supply continuity. Check the datasheet or manufacturer for lifecycle details.

Identifies the company that designed and produced the component. Buyers often filter by manufacturer to ensure brand reliability, quality standards, and supply chain consistency. Verify the manufacturer against the datasheet and official packaging to avoid counterfeit parts.

Total gate charge required to switch the MOSFET at a gate-source voltage of 10 V. Lower values reduce switching losses and improve efficiency. Compare this parameter when designing gate drivers or high-frequency circuits, and verify against the datasheet for your operating conditions.

Specifies the total count of individual transistor die or chips integrated within a single component package. This is critical for multi-transistor arrays, Darlington pairs, or modules. Verify against the datasheet to ensure the package meets your circuit design requirements for channel count and configuration.

Typical gate-drain charge (Qgd) in nanocoulombs, indicating the charge required to switch the MOSFET's drain during turn-off. Lower values enable faster switching and reduced losses. Verify against datasheet for your operating conditions.

Typical charge stored in the diode junction during reverse recovery. Compare this value to estimate switching losses in rectifier and freewheeling circuits. Verify against the datasheet for your operating conditions.

Maximum gate-source voltage rating for a MOSFET. This is the absolute maximum voltage that can be applied between gate and source without damaging the oxide layer. Ensure your gate drive circuit never exceeds this limit, including transients and ringing.

This is the maximum drain-source on-resistance when the junction temperature reaches 175°C. It indicates conduction losses at high temperature. Compare this value with the datasheet to ensure thermal performance meets your application requirements.

Typical drain-source on-resistance when the gate-source voltage is 10 V. Lower values reduce conduction losses and heat. Compare this parameter across MOSFETs for switching and power applications, and verify it against the datasheet's test conditions.

This is the maximum drain-source on-resistance when the gate-source voltage is 10 V. Lower values mean less conduction loss. Check this against your thermal and efficiency requirements, and verify it in the datasheet for your operating conditions.

Typical resistance between drain and source when the MOSFET is fully enhanced at a gate-source voltage of 4.5 V. Lower values reduce conduction losses and improve efficiency. Verify this parameter against the datasheet for your operating conditions, especially in power switching applications.

Identifies the physical package type or designator, such as SOIC, QFN, or DIP. This determines PCB footprint, thermal performance, and assembly compatibility. Verify the package matches your board layout and manufacturing capabilities. Check the datasheet for exact dimensions.

Maximum junction temperature is the highest allowable operating temperature of the semiconductor die. Exceeding it can cause thermal damage or reduced reliability. Compare this limit with your application's worst-case thermal conditions and verify against the datasheet's thermal specifications.

Indicates the component meets AEC-Q or other automotive reliability standards. Verify the specific qualification level in the datasheet. Essential for designs targeting automotive applications where extended temperature ranges and high vibration resistance are critical.

Indicates whether ESD protection diodes are built-in between gate and source. This feature helps protect the MOSFET from electrostatic discharge during handling and operation. Confirm this attribute when designing for high-reliability applications or when external protection is not desired.

Maximum total power the component can dissipate without damage. Compare across parts to ensure adequate thermal margin for your application. Verify against datasheet conditions, as derating may apply at high temperatures.

Maximum total power the component can dissipate without damage. Compare across parts to ensure adequate thermal margin for your application. Verify against datasheet conditions, as derating may apply at high temperatures.

Typical output capacitance (Coss) of a power semiconductor, measured between drain and source. It affects switching losses and high-frequency behavior. Compare values when designing snubbers or resonant converters. Always verify against the datasheet for your operating conditions.

Maximum gate-source threshold voltage at 25°C. This is the highest gate-source voltage at which the MOSFET starts to conduct. Ensure your drive voltage exceeds this threshold to fully turn on the device, especially in low-voltage gate drive designs.

Maximum drain-source voltage rating for MOSFETs. This is the highest voltage that can be applied between drain and source without causing breakdown. Check the datasheet for absolute maximum ratings and ensure your circuit operates well below this limit for reliability.

Typical gate-source threshold voltage at which the MOSFET begins to conduct. Check this value to ensure proper gate drive voltage levels in your switching application. Compare with min and max values from datasheet.

Maximum guaranteed drain-source on-resistance at a gate-source voltage of 4.5 V and a junction temperature of 25°C. This worst-case value is critical for estimating power dissipation and ensuring thermal performance. Always check this limit in the datasheet for reliable design.

Typical input capacitance of a MOSFET, measured in picofarads. It affects gate drive requirements and switching speed. Compare this value with the datasheet to ensure your driver can handle the charge and to optimize switching performance.

Indicates when the component was first introduced to the market. Useful for assessing product maturity, lifecycle stage, and availability. Check the datasheet for the exact release date and compare with similar parts to ensure long-term supply.

Maximum continuous drain current for a MOSFET or transistor. This is the highest current the device can handle continuously without exceeding thermal limits. Verify against the datasheet for your operating conditions, including heatsinking and ambient temperature.

Maximum continuous drain current that the MOSFET can handle at a case temperature of 100 °C. This value is lower than at 25 °C due to thermal limits. Compare it with your operating current and verify against the datasheet for safe design.

Maximum pulsed drain current for MOSFETs. This value indicates the highest current the device can handle during a short pulse. Compare with continuous drain current and verify against the datasheet for pulse width and duty cycle limitations.

Maximum drain-source voltage rating for MOSFETs. This is the highest voltage that can be applied between drain and source without causing breakdown. Check the datasheet for absolute maximum ratings and ensure your circuit operates well below this limit for reliability.

Minimum gate-source threshold voltage at 25°C. This is the lowest gate-source voltage at which the MOSFET begins to turn on. Use this value to ensure your gate drive voltage is sufficiently above it to guarantee conduction under all operating conditions.

Maximum allowable junction temperature for the semiconductor die. Exceeding this limit can degrade performance or cause permanent damage. Verify this value in the datasheet before designing thermal management or operating at high power levels.

Indicates the component meets AEC-Q or other automotive reliability standards. Verify the specific qualification level in the datasheet. Essential for designs targeting automotive applications where extended temperature ranges and high vibration resistance are critical.

Specifies the minimum gate-source voltage that begins to turn on the MOSFET. Compare this value when selecting drivers or logic-level devices. Verify against the datasheet's test conditions, as temperature and drain current affect the actual threshold.

Total charge that must be removed from a diode during turn-off. It affects switching losses and efficiency in high-frequency circuits. Compare values when selecting fast-recovery diodes for power converters, and verify against the datasheet for your operating conditions.

This is the maximum drain-source resistance when the gate is driven to 10V. Lower values reduce conduction losses. Compare this parameter across MOSFETs for high-current switching applications. Always verify against the datasheet's test conditions.

Total charge needed to charge the gate-drain capacitance during switching. It affects switching losses and driver requirements. Compare values when designing high-frequency power circuits. Verify against the datasheet for accurate timing and efficiency calculations.

This is the maximum drain-source resistance when the gate-source voltage is 4.5V. Lower values mean less conduction loss. Compare this parameter across MOSFETs for high-current switching applications, and always verify it against the datasheet's test conditions.

Maximum voltage that can be applied between drain and source without damaging the MOSFET. Ensure your circuit's operating voltage stays below this limit. Check the datasheet for absolute maximum ratings and derating guidelines.

Total charge required to switch the MOSFET gate to 10V. Higher values slow switching and increase driver losses. Compare with gate driver capability and switching frequency. Verify against datasheet curves for accurate timing.

Input capacitance is the effective capacitance measured at the input terminals of a component. It affects signal integrity, impedance matching, and filter design. Engineers compare this value to ensure proper circuit operation and stability, especially in high-frequency applications. Always verify against the datasheet for accurate performance.

Output capacitance is the effective capacitance between the drain and source terminals of a MOSFET or transistor. It affects switching losses and high-frequency performance. Compare this value when designing power converters or amplifiers, and verify it against the datasheet for accurate circuit simulation.

Maximum power the component can safely dissipate as heat without damage. Exceeding this may cause failure. Check datasheet for thermal resistance and derating curves under your operating conditions.

Maximum continuous drain current the MOSFET can handle without exceeding thermal limits. Compare this rating with your circuit's peak and average current demands. Verify against the datasheet's thermal resistance and operating conditions to ensure reliable performance.

Specifies the minimum and maximum ambient temperatures at which the component operates reliably. Compare this range with your application's thermal environment to ensure performance and longevity. Always verify against the datasheet for derating curves and absolute maximum ratings.

Manufacturing technology or process used for the component, such as thin film, thick film, or semiconductor process. Affects performance, stability, and cost. Confirm the technology matches your application requirements and environmental conditions.

Qualification standard or grade for the component. This indicates the reliability and testing level, such as automotive AEC-Q or industrial. Choose the appropriate qualification for your application's environmental and reliability requirements. Verify with the datasheet for specific standards.

Identifies the physical package type or designator, such as SOIC, QFN, or DIP. This determines PCB footprint, thermal performance, and assembly compatibility. Verify the package matches your board layout and manufacturing capabilities. Check the datasheet for exact dimensions.