BUK9219-55A Automotive MOSFETs от Nexperia

Indicates whether the component is compatible with wave soldering processes. Check this attribute to ensure your assembly method matches the component's solderability and thermal limits, preventing damage during manufacturing.

Specifies the packaging method for the component, such as tape and reel, tube, tray, or bulk. Packaging affects handling, storage, and assembly processes. Verify the packing type against your production requirements and the datasheet to ensure compatibility with your pick-and-place equipment.

Indicates whether the component supports reflow soldering, a common surface-mount assembly process. Check this attribute to ensure compatibility with your PCB manufacturing line and avoid thermal damage during assembly.

Specifies the electrical channel configuration, such as unidirectional or bidirectional, for signal or power routing. This attribute is critical for selecting components like multiplexers, isolators, or level shifters. Verify the channel type against your application requirements and the datasheet to ensure correct signal flow and compatibility.

Indicates the component meets AEC-Q or other automotive reliability standards. Verify the specific qualification level in the datasheet. Essential for designs targeting automotive applications where extended temperature ranges and high vibration resistance are critical.

Specifies how many individual transistor die are contained within a single component package. This is critical for multi-transistor arrays, dual or quad configurations, and integrated driver circuits. Verify against the datasheet to ensure the package matches your circuit design requirements.

Typical input capacitance (Ciss) is the effective capacitance seen at the gate terminal under specified test conditions. It affects switching speed and gate drive requirements. Compare values when designing high-frequency or high-speed switching circuits, and verify against the datasheet for accurate performance.

This is the maximum drain-source resistance when the MOSFET is fully on with a 10V gate drive. Lower values reduce conduction losses. Compare this parameter across devices for high-current switching applications, and always verify it against the datasheet's test conditions.

Typical gate-source voltage at which the MOSFET begins to turn on. Compare this value across devices to ensure the gate drive voltage is sufficient for full enhancement. Always verify against the datasheet for your operating temperature range.

Output capacitance between drain and source with gate shorted, affecting switching losses and high-frequency performance. Compare values when designing power converters or amplifiers. Verify against datasheet curves for accurate circuit simulation.

This is the maximum drain-source resistance when the MOSFET is fully on at a gate-source voltage of 5V. Lower values mean less conduction loss. Compare this parameter across devices to ensure efficient switching in your power circuit, and always verify it against the datasheet.

Specifies the highest temperature the semiconductor junction can sustain without damage or degradation. Compare this limit with your operating conditions and thermal management to ensure reliable performance. Verify against the datasheet for derating curves and long-term reliability.

Maximum total power the component can safely dissipate as heat under specified conditions. Compare this limit with your circuit's expected losses to prevent overheating. Always verify against the datasheet's thermal resistance and ambient temperature ratings.

Total charge required to drive the gate to the specified voltage during switching. Lower Qg means faster switching and lower drive losses. Compare Qg values when selecting MOSFETs or IGBTs for high-frequency circuits. Always verify against the datasheet for your operating conditions.

Indicates when the component was first introduced to the market. Useful for assessing product maturity, lifecycle stage, and availability. Check the datasheet for the exact release date and compare with similar parts to ensure long-term supply.

Specifies the highest continuous current the MOSFET can handle at the drain terminal under specified conditions. Compare this value with your circuit's peak current demand to ensure reliable operation. Always verify against the datasheet's thermal and voltage ratings.

This is the maximum drain-source resistance when the MOSFET is fully on at a gate-source voltage of 4.5V and a junction temperature of 25°C. Lower values mean less conduction loss. Compare this parameter when selecting power switches for efficiency and thermal performance.

This is the maximum voltage that can be applied between the drain and source terminals without causing breakdown. Check the datasheet for the absolute maximum rating, and ensure your circuit operates well below this limit to avoid damage.

Identifies the physical package type or designator, such as SOIC, QFN, or DIP. This determines PCB footprint, thermal performance, and assembly compatibility. Verify the package matches your board layout and manufacturing capabilities. Check the datasheet for exact dimensions.