Поставка оригинальных FQPF8N80C, Транзисторы - Полевые транзисторы, MOSFET - Одиночные, от ON Semiconductor

The FQPF8N80C is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for applications that require efficient switching and high power handling capabilities. Here’s a detailed description of its key features and specifications:

Key Features:

1. Voltage Rating: The FQPF8N80C has a maximum drain-source voltage (V_DS) of 800 volts, making it suitable for high-voltage applications.

2. Current Rating: It can handle a continuous drain current (I_D) of up to 8 amps at a specified temperature, which allows it to be used in various power management applications.

3. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.85 ohms at a gate-source voltage (V_GS) of 10 volts. This low on-resistance contributes to reduced power losses during operation, enhancing overall efficiency.

4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2 to 4 volts, which allows for easy drive with standard logic levels.

5. Package Type: The FQPF8N80C is available in a TO-220 package, which provides good thermal performance and allows for easy heat dissipation. This package is commonly used in power applications due to its robust construction.

6. Thermal Characteristics: The device has a maximum junction temperature (T_J) of 150 degrees Celsius, which allows it to operate in demanding environments. The thermal resistance from junction to case (RθJC) is low, facilitating effective heat management.

7. Fast Switching: The FQPF8N80C is designed for fast switching applications, making it suitable for use in power supplies, motor control, and other high-frequency applications.

8. Applications: Common applications include switch-mode power supplies (SMPS), DC-DC converters, inverters, and other power electronics where high efficiency and reliability are critical.

Electrical Characteristics:

• V_DS (Max): 800V
• I_D (Max): 8A
• R_DS(on): 0.85Ω (at V_GS = 10V)
• V_GS(th): 2V to 4V
• T_J (Max): 150°C

Conclusion:

The FQPF8N80C from ON Semiconductor is a versatile and reliable N-channel MOSFET that is well-suited for high-voltage applications requiring efficient switching and thermal management. Its combination of high voltage rating, low on-resistance, and robust package design makes it an excellent choice for engineers looking to optimize power performance in their designs.