Поставка оригинальных FAN2106MPX, PMIC - стабилизаторы напряжения - DC-DC импульсные стабилизаторы, от ON Semiconductor

The S29CD-G Flash Family is a burst mode, Dual Boot, Simultaneous Read/Write family of Flash Memory with VersatileI/O™ manufactured on 170 nm Process Technology.Distinctive CharacteristicsArchitecture Advantages
• Simultaneous Read/Write operations — Read data from one bank while executing erase/ program functions in other bank — Zero latency between read and write operations — Two bank architecture: large bank/small bank 75%/25%
• User-Defined x32 Data Bus
• Dual Boot Block — Top and bottom boot sectors in the same device
• Flexible sector architecture — CD032G: Eight 2K Double Word, Sixty-two 16K Double Word, and Eight 2K Double Word sectors — CD016G: Eight 2K Double Word, Thirty-two 16K Double Word, and Eight 2K Double Word sectors
• Secured Silicon Sector (256 Bytes) — Factory locked and identifiable: 16 bytes for secure, random factory Electronic Serial Number; Also know as Electronic Marking
• Manufactured on 170 nm Process Technology
• Programmable Burst interface — Interfaces to any high performance processor — Linear Burst Read Operation: 2, 4, and 8 double word linear burst with or without wrap around
• Program Operation — Performs synchronous and asynchronous write operations of burst configuration register settings independently
• Single power supply operation — Optimized for 2.5 to 2.75 volt read, erase, and program operations
• Compatibility with JEDEC standards (JC42.4) — Software compatible with single-power supply Flash — Backward-compatible with AMD/Fujitsu Am29LV/ MBM29LV and Am29F/MBM29F flash memoriesPerformance Characteristics
• High performance read access — Initial/random access times of 48 ns (32 Mb) and 54 ns (16 Mb) — Burst access times of 7.5 ns (32 Mb) or 9 ns (16Mb)
• Ultra low power consumption — Burst Mode Read: 90 mA @ 75 MHz max — Program/Erase: 50 mA max — Standby mode: CMOS: 60 µA max
• 1 million write cycles per sector typical
• 20 year data retention typical
• VersatileI/O™ control — Generates data output voltages and tolerates data input voltages as determined by the voltage on the VIO pin — 1.65 V to 3.60 V compatible I/O signalsSoftware
Features
• Persistent Sector Protection — Locks combinations of individual sectors and sector groups to prevent program or erase operations within that sector (requires only VCC levels)
• Password Sector Protection — Locks combinations of individual sectors and sector groups to prevent program or erase operations within that sector using a user-definable 64-bit password
• Supports Common Flash Interface (CFI)
• Unlock Bypass Program Command — Reduces overall programming time when issuing multiple program command sequences
• Data# Polling and toggle bits — Provides a software method of detecting program or erase operation completionHardware
Features
• Program Suspend/Resume & Erase Suspend/ Resume — Suspends program or erase operations to allow reading, programming, or erasing in same bank
• Hardware Reset (RESET#), Ready/Busy# (RY/ BY#), and Write Protect (WP#) inputs
• ACC input — Accelerates programming time for higher throughput during system production
• Package options — 80-pin PQFP — 80-ball Fortified BGA — Pb-free package option also available — Known Good Die