BCP53-16T1G Транзисторы биполярные (BJT) одиночные от ON Semiconductor

The ON Semiconductor BCP53-16T1G is a high-voltage, high-current PNP silicon epitaxial transistor designed for a wide range of applications, including switching, amplification, and voltage regulation. It features a high collector-to-emitter breakdown voltage of 80 V and a maximum collector current of 1.5 A.

Key Features

• High collector-to-emitter breakdown voltage (80 V)
• Maximum collector current (1.5 A)
• Low saturation voltage (500 mV at 50 mA, 500 mA)
• Low cutoff current (100 nA (ICBO))
• DC current gain (hFE) of at least 100 at 150 mA, 2 V
• Maximum power dissipation of 1.5 W
• Transition frequency of 50 MHz
• Operating temperature range of -65°C to 150°C
• Surface mount package (TO-261-4, TO-261AA)

Applications

• Switching
• Amplification
• Voltage regulation
• General-purpose use in electronic circuits

Electrical Characteristics

• Collector-to-emitter breakdown voltage (VCEO): 80 V
• Maximum collector current (IC): 1.5 A
• Collector-emitter saturation voltage (VCE(sat)): 500 mV at 50 mA, 500 mA
• Collector cutoff current (ICBO): 100 nA
• DC current gain (hFE): 100 at 150 mA, 2 V
• Maximum power dissipation (PD): 1.5 W
• Transition frequency (ft): 50 MHz
• Operating temperature range (Tj): -65°C to 150°C

Package

• TO-261-4, TO-261AA