
MOSFET N-CH 100V 40A TO220AB
SI2301CDS-T1-GE3 — это компонент категории Transistors - FETs, MOSFETs - Single от Vishay в упаковке SOT23. Его обычно проверяют для MOSFET P-CH 20V 3.1A SOT23-3. На этой странице указаны текущие остатки TrustCompo, уровни цен, данные по корпусу, доступ к datasheet, compliance-атрибуты, варианты отгрузки со склада Hong Kong, подтверждение оплаты и RFQ-варианты для покупателей, которым нужно подтвердить именно этот ordering code.

SI2301CDS-T1-GE3
TCE000082324
SOT23
TrenchFET®
1
MOSFET P-CH 20V 3.1A SOT23-3
-
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RFQ checklist
Подтвердите ключевые данные закупки для SI2301CDS-T1-GE3 до RFQ, выпуска PO и планирования отгрузки.
Укажите точный part number, производителя, package и approval constraints в RFQ.
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Обзор продукта
Проверьте sourcing context для SI2301CDS-T1-GE3 от Vishay, включая идентификацию товара, применимость, package notes и закупочные детали.
The SI2301CDS-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. This component is designed for a variety of applications, including power management, switching, and amplification in electronic circuits.
The SI2301CDS-T1-GE3 from Vishay is a versatile and efficient N-channel MOSFET that is well-suited for a range of low-voltage applications. Its compact size, low on-resistance, and robust electrical characteristics make it an excellent choice for designers looking to optimize performance in their electronic circuits.
Технические параметры
Сравните сгруппированные параметры SI2301CDS-T1-GE3 от Vishay, включая package, series, key attributes и technical values для engineering и sourcing review.
Product Parameter
Turn On Delay Time
11 ns
Product Parameter
Drain to Source Resistance
90mOhm
Product Parameter
Number of Channels
1
Product Parameter
Number of Elements
1
Product Parameter
Drain to Source Voltage (Vdss)
20V
Product Parameter
Turn-Off Delay Time
30 ns
| Параметр | Значение |
|---|---|
Turn On Delay Time Time from when the input signal crosses its threshold until the output begins to turn on. This parameter affects switching speed and power dissipation in high-frequency circuits. Verify it against the datasheet for your specific load and drive conditions. | 11 ns |
Drain to Source Resistance This is the on-state resistance between the drain and source terminals of a MOSFET. It affects power dissipation and efficiency. Lower values are preferred for high-current switching. Always check the datasheet for the specified test conditions, as RDS(on) varies with gate voltage and temperature. | 90mOhm |
Number of Channels Specifies how many independent signal paths or outputs the component provides. Compare this value with your circuit requirements to ensure each channel can be used separately. Verify the channel configuration in the datasheet, as some devices may share pins or have internal connections. | 1 |
Number of Elements Indicates how many independent functional sections are integrated into a single component package. This matters when comparing multi-channel devices or resistor networks. Always verify the exact element count against the datasheet to ensure it matches your circuit design requirements. | 1 |
Drain to Source Voltage (Vdss) Maximum voltage that can be applied between drain and source terminals without causing breakdown. Critical for MOSFET selection in power circuits. Verify against datasheet for safe operating area and derating. | 20V |
Turn-Off Delay Time Measures the time from when the turn-off command is applied to when the device actually begins to switch off. This delay affects switching losses and timing in power circuits. Engineers compare this parameter to ensure proper synchronization and to minimize power dissipation during high-frequency operation. | 30 ns |
Rise Time Time required for a signal to transition from a low to a high level, typically measured between 10% and 90% of the amplitude. Important for digital interfaces, switching regulators, and pulse circuits. Check the datasheet for test conditions and load capacitance. | 35ns |
Rds On Max Maximum on-state resistance between drain and source when the MOSFET is fully enhanced. Lower values reduce conduction losses and heat generation. Compare this parameter for efficiency in power supplies and motor drivers. Check the datasheet for variation with gate voltage and temperature. | 112 mΩ |
| Параметр | Значение |
|---|---|
Part Status Lifecycle status of the part, such as active or obsolete. Indicates availability and long-term support from the manufacturer. Check this before design-in to avoid last-time buys or supply disruptions. Verify with the datasheet or distributor for current status. | Active |
REACH Status Shows whether the component complies with the EU REACH regulation. Essential for legal market access in Europe. Check the manufacturer's latest statement to confirm that no substances of very high concern are present above the threshold. | REACH Unaffected |
ECCN Export Control Classification Number assigned by the U.S. government. Determines whether the component requires an export license. Essential for international trade compliance. Verify the ECCN with the manufacturer or supplier before shipping to avoid legal issues. | EAR99 |
Lead Free Indicates whether the component is manufactured without lead, complying with RoHS and similar regulations. Check this attribute to ensure environmental compliance for your market. Verify against the datasheet for exact material declarations. | Lead Free |
Mounting Type Specifies how the component is attached to the PCB, such as through-hole or surface mount. This affects assembly processes, thermal performance, and mechanical strength. Buyers should verify compatibility with their manufacturing capabilities and design requirements. | Surface Mount |
Minimum Operating Temperature Specifies the lowest ambient temperature at which the component is guaranteed to function within its electrical and mechanical specifications. Verify this limit against the datasheet for your application's thermal environment, especially for automotive or industrial designs. | -55°C |
Factory Lead Time Indicates the typical duration from order confirmation to shipment from the manufacturer's facility. This helps you plan production schedules and inventory. Verify current lead times with your distributor or supplier, as they may vary based on order quantity, product availability, and market conditions. | 14 Weeks |
Packaging Indicates the form of delivery for the component, such as tape and reel, tube, or tray. This affects handling, storage, and assembly processes. Verify the packaging type matches your production requirements and equipment compatibility. | Tape & Reel (TR) |
Published Published indicates the date when the product data was released or updated in the catalog. It helps buyers assess the freshness of the information and whether the component is current or possibly obsolete. Check the datasheet for the latest revisions. | 2012 |
Max Junction Temperature (Tj) Specifies the highest temperature the semiconductor junction can sustain without damage or degradation. Compare this limit with your operating conditions and thermal management to ensure reliable performance. Verify against the datasheet for derating curves and long-term reliability. | 150°C |
Element Configuration Describes the internal arrangement of components, such as resistor networks or switch contacts. This affects the circuit topology and pinout. Engineers must verify this configuration against the datasheet to ensure correct integration into the PCB layout and proper functionality. | Single |
Manufacturer Identifies the company that designed and produced the component. Buyers often filter by manufacturer to ensure brand reliability, quality standards, and supply chain consistency. Verify the manufacturer against the datasheet and official packaging to avoid counterfeit parts. | Vishay |
Technology Manufacturing technology or process used for the component, such as thin film, thick film, or semiconductor process. Affects performance, stability, and cost. Confirm the technology matches your application requirements and environmental conditions. | MOSFET (Metal Oxide) |
Sub-Categories Indicates the specific product subcategories or classifications within the broader component family. Helps narrow down search results and identify the exact type of component needed for your design. Review the subcategory to ensure compatibility with your application. | Transistors - FETs, MOSFETs - Single |
Categories Lists the product categories or classifications assigned to this component, such as connectors, capacitors, or modules. This helps in filtering and comparing similar parts. Review the categories to ensure the component fits your application and to find alternative parts in the same class. | Discrete Semiconductor Products |
Operating Temperature Specifies the ambient temperature range within which the component reliably functions. Compare this with your application's thermal environment to ensure proper operation. Always verify against the datasheet for derating curves and maximum ratings. | -55°C~150°C TJ |
FET Type Classification of field-effect transistor based on channel polarity and mode, such as N-channel or P-channel, enhancement or depletion. This determines the required gate drive polarity and circuit topology. Engineers select the appropriate type for switching or amplification applications. Always confirm the exact type from the datasheet before design. | P-Channel |
Package / Case Physical package or case type of the component, defining its dimensions, mounting style, and thermal characteristics. Common types include SMD, through-hole, BGA, and QFN. Choose the package that fits your PCB layout and assembly process. Verify the exact package code in the datasheet for footprint compatibility. | TO-236-3, SC-59, SOT-23-3 |
Vgs(th) Max @ Id Maximum gate threshold voltage at a specified drain current. This parameter indicates the gate voltage needed to begin conduction. Compare it with your gate drive voltage to ensure reliable switching. Verify against the datasheet for your operating conditions. | 1V @ 250μA |
Series Indicates the product series or family, grouping components with similar design and specifications. Helps identify compatible parts and compare within a product line. Verify the series against the datasheet to ensure correct application. | TrenchFET® |
Height Physical height of the component, measured from the mounting surface to the topmost point. This dimension is critical for clearance in compact assemblies and for ensuring proper fit within enclosures. Always verify against the datasheet for tolerance and mounting considerations. | 1.12mm |
Contact Plating Specifies the metal coating applied to the contact surfaces of connectors, switches, or relays. This finish affects conductivity, corrosion resistance, and durability. Engineers should verify the plating material and thickness against the datasheet to ensure reliable performance in the intended environment. | Tin |
Radiation Hardening Indicates if the component is designed to withstand ionizing radiation in space, nuclear, or high-energy physics applications. Compare radiation-tolerant vs. radiation-hardened parts for mission-critical designs. Verify the total ionizing dose (TID) and single-event effect (SEE) ratings in the datasheet. | No |
Mounting Type Specifies how the component attaches to the PCB or assembly, such as surface mount, through-hole, or chassis mount. This affects soldering process, mechanical stability, and thermal performance. Verify compatibility with your board layout and assembly capabilities. | Surface Mount |
Number of Pins Total number of pins or contacts on the component. This determines the footprint and mating connector requirements. Always match the pin count to your PCB layout and connector specification to ensure proper electrical and mechanical connection. | 3 |
Vgs (Max) Maximum allowable gate-to-source voltage for a MOSFET. Exceeding this rating can permanently damage the gate oxide. Check the datasheet's absolute maximum ratings and ensure your drive circuit stays within this limit under all conditions. | ±8V |
Gate to Source Voltage (Vgs) Voltage applied between gate and source terminals that controls the MOSFET's conduction. This rating defines the absolute maximum allowable voltage to prevent gate oxide breakdown. Check the threshold voltage and recommended drive levels in the datasheet for reliable switching. | 8V |
Drain to Source Breakdown Voltage This is the maximum voltage the MOSFET can withstand between drain and source before breakdown occurs. Engineers compare it to ensure the device operates safely within the circuit's voltage rails. Always verify this value against the datasheet for your specific application. | -20V |
Width Physical width of the component body, typically in millimeters. Essential for PCB footprint design and mechanical fit. Verify against the datasheet to ensure proper clearance and compatibility with your board layout and enclosure. | 1.4mm |
Max Operating Temperature Specifies the highest ambient temperature at which the component reliably functions. Compare this limit with your application's thermal environment to ensure safe operation. Always verify against the datasheet's derating curves and test conditions, as exceeding this value may cause performance degradation or permanent damage. | 150°C |
Length Specifies the physical length of the component body, typically in millimeters. This dimension is critical for PCB layout and mechanical fit. Verify against the datasheet to ensure proper clearance and alignment in your design. | 3.04mm |
Power Dissipation Maximum power the component can safely dissipate as heat without exceeding its thermal limits. Compare this rating with your application's expected power loss to ensure reliable operation. Always verify against the datasheet's derating curves and ambient temperature conditions. | 1.6W |
Threshold Voltage The minimum gate-to-source voltage that makes the device start conducting. Compare this value across parts to ensure your drive circuit can reliably turn the switch on. Always verify against the datasheet for your operating temperature. | -1V |
Fall Time (Typ) Typical time for the output signal to transition from 90% to 10% of its amplitude. This parameter indicates switching speed and affects high-frequency performance. Compare with rise time and verify against the datasheet for your specific operating conditions. | 35 ns |
Drive Voltage (Max Rds On, Min Rds On) Gate-to-source voltage levels that produce the specified maximum and minimum on-resistance values. This helps designers select appropriate gate drive circuits and logic levels. Check the datasheet's transfer characteristics to ensure the MOSFET fully enhances at your operating voltage. | 2.5V 4.5V |
Weight Specifies the physical weight of the electronic component, important for logistics, shipping cost, and mechanical design. Verify the exact weight in the datasheet or packaging information, as it may vary with packaging type and quantity. | 1.437803g |
Gate Charge (Qg) (Max) @ Vgs This is the total charge required to switch the MOSFET gate to a specified gate-source voltage. It determines switching speed and driver power losses. Compare values to optimize efficiency in high-frequency circuits. Verify against datasheet for your operating conditions. | 10nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds Maximum input capacitance of the MOSFET at a specified drain-source voltage. This value affects switching speed and gate drive requirements. Compare across devices to estimate switching losses and driver capability. Always verify against the datasheet for your operating conditions. | 405pF @ 10V |
Continuous Drain Current (Id) @ 25°C Maximum continuous current the MOSFET can conduct at 25°C case temperature. This rating determines thermal performance and suitability for power applications. Verify against the datasheet's safe operating area and derating curves for reliable operation. | 3.1A Tc |
Maximum Power Dissipation Indicates the highest power the component can safely dissipate as heat without exceeding its thermal limits. Compare this value with your circuit's expected power loss to ensure reliable operation. Always verify against the datasheet's derating curves for elevated ambient temperatures. | 860mW Ta 1.6W Tc |
Nominal Vgs Nominal gate-to-source voltage for MOSFETs and other FETs. This value indicates the typical voltage bias required for intended operation. Engineers compare it with threshold voltage and drive conditions to ensure proper switching and to avoid overvoltage damage. Always verify against the datasheet's absolute maximum ratings. | -400 mV |
Continuous Drain Current (ID) Maximum continuous current the MOSFET can conduct in the on-state without exceeding thermal limits. Compare this rating with your circuit's peak and average current demands. Always verify against the datasheet's thermal resistance and ambient temperature conditions. | -3.1A |
Rds On (Max) @ Id, Vgs Maximum drain-source on-resistance measured at a specified drain current and gate-source voltage. Lower values reduce conduction losses in power circuits. Compare this parameter when selecting MOSFETs for efficiency and thermal performance, and verify against the datasheet. | 112mOhm @ 2.8A, 4.5V |
Input Capacitance Input capacitance is the effective capacitance measured at the input terminals of a component. It affects signal integrity, impedance matching, and filter design. Engineers compare this value to ensure proper circuit operation and stability, especially in high-frequency applications. Always verify against the datasheet for accurate performance. | 405pF |
Resistance Electrical resistance value in ohms, defining opposition to current flow. Critical for current limiting, voltage division, and signal conditioning. Always check tolerance and power rating in the datasheet for reliable circuit operation. | 112mOhm |
Supplier Device Package Indicates the physical package type as designated by the component manufacturer, such as SOIC, QFN, or BGA. This affects PCB footprint, thermal performance, and assembly processes. Confirm compatibility with your board layout and soldering requirements before design finalization. | SOT-23-3 (TO-236) |
Manufacturer's Part No. The unique part number assigned by the original component manufacturer. Use this to cross-reference datasheets, verify specifications, and ensure the exact component matches your design requirements. Always confirm the number against the manufacturer's official documentation. | SI2301CDS-T1-GE3 |
| Параметр | Значение |
|---|---|
Moisture Sensitivity Level (MSL) Indicates the floor life of a component before it must be baked prior to soldering. Higher levels require stricter handling and shorter exposure times. Verify the MSL rating in the datasheet to ensure proper storage and assembly conditions. | 1 (Unlimited) |
RoHS Status Indicates whether the component complies with the EU RoHS directive restricting hazardous substances. Buyers should verify this status for regulatory compliance and market access. Check the datasheet or certificate for exact compliance details. | ROHS3 Compliant |
REACH SVHC Indicates whether the product contains substances of very high concern as per the REACH regulation. Buyers should verify this for compliance with EU environmental standards, especially when exporting to Europe. Check the manufacturer's declaration or datasheet for accurate SVHC status. | No SVHC |
HTSUS Harmonized Tariff Schedule of the United States code for customs classification. Essential for import/export documentation and duty calculation. Verify the correct code with a trade specialist to avoid customs delays. | 8541.21.0095 |
Предпросмотр datasheet
Просмотрите datasheet для SI2301CDS-T1-GE3 от Vishay, чтобы проверить package, electrical characteristics, application notes и document evidence до RFQ.
Документы уведомлений
Для SI2301CDS-T1-GE3 сейчас не показан публичный product notice document. Подтвердите PCN, PDN, EOL, date code и lifecycle status во время RFQ до производственной закупки.
Связанные варианты закупки
Посмотрите больше компонентов из той же подкатегории, чтобы сравнить наличие, совместимость и варианты закупки.

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Частые вопросы
Точные ответы для покупателей, которые проверяют ordering code SI2301CDS-T1-GE3, упаковку, наличие, datasheet и путь замены.
SI2301CDS-T1-GE3 — это точный ordering code для компонента категории Transistors - FETs, MOSFETs - Single от Vishay. Текущий корпус указан как SOT23, а контекст позиции включает MOSFET P-CH 20V 3.1A SOT23-3. Используйте полный код при запросе склада, цены, datasheet или compliance-подтверждения.
Рассматривайте SI2301CDS-T1-GE3 как полный ordering code при RFQ и инженерной проверке. Подтвердите указанный корпус SOT23, документацию производителя Vishay, ordering table в datasheet, reel или packing details и требования внутреннего утверждения до замены или выпуска PO.
SI2301CDS-T1-GE3 сейчас указан с корпусом SOT23 от Vishay. Перед утверждением закупки подтвердите manufacturer package drawing, footprint, pinout, tape-and-reel данные и требования к приемке.
SI2301CDS-T1-GE3 сейчас помечен на странице как позиция с наличием. Перед заказом подтвердите корпус (SOT23), указанный склад (77071), доступное количество (75578), нужное количество, срок поставки, финальную цену, compliance-требования и совпадение точного ordering code через RFQ.
Для SI2301CDS-T1-GE3 сейчас не опубликован список связанных альтернатив. Отправьте RFQ с количеством, ограничениями по корпусу и требованиями к утверждению, чтобы TrustCompo помогла проверить возможные replacement options.