IRFP260NPBF Транзисторы - Полевые транзисторы, MOSFET - Одиночные от Infineon Technologies

The IRFP260NPBF is a Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This MOSFET is designed for use in high-power switching applications where efficiency, reliability, and high current handling capabilities are required.

Key Features:

• N-Channel Enhancement Mode: The IRFP260NPBF is an N-channel MOSFET, meaning it conducts current when a positive voltage is applied to its gate terminal relative to its source terminal.

• Enhancement Mode: It operates in enhancement mode, where it is normally off and requires a positive voltage at the gate terminal to turn on the transistor.

• Low On-Resistance: The MOSFET has a low on-resistance (RDS(on)), resulting in minimal conduction losses and voltage drop across the transistor when it is conducting. This feature enhances efficiency and reduces power dissipation.

• High Current Handling Capability: The IRFP260NPBF is capable of handling high currents, making it suitable for use in high-power applications such as motor control, power supplies, and inverters.

• Fast Switching Speed: It features fast switching speeds, enabling rapid switching between on and off states, which is essential for applications requiring high-frequency switching.

• High Voltage Rating: The MOSFET is rated for high voltage operation, allowing it to be used in applications with higher voltage requirements.

• TO-247 Package: Packaged in a TO-247 package, the IRFP260NPBF offers excellent thermal performance and high power dissipation capability.

• RoHS Compliance: Manufactured in compliance with the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental sustainability and compatibility with lead-free soldering processes.

Applications:

• Switched-mode power supplies (SMPS)
• DC-DC converters
• Motor control circuits
• Inverters
• Power factor correction (PFC) circuits
• Audio amplifiers
• High-current voltage regulators