SI2301BDS-T1-E3 Transistors - FETs, MOSFETs - Single от Vishay
SI2301BDS-T1-E3 — это компонент категории Transistors - FETs, MOSFETs - Single от Vishay в упаковке SOT23. Его обычно проверяют для MOSFET P-CH 20V 2.2A SOT23-3. На этой странице указаны текущие остатки TrustCompo, уровни цен, данные по корпусу, доступ к datasheet, compliance-атрибуты, варианты отгрузки со склада Hong Kong, подтверждение оплаты и RFQ-варианты для покупателей, которым нужно подтвердить именно этот ordering code.
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4 сертификата
ISO 9001
Процессы менеджмента качества для более стабильной закупки и обращения с продукцией.
AS9120B
Контроль дистрибуции авиационного уровня для прослеживаемости и надежности.
ISO 14001
Экологическая дисциплина в операционных и складских процессах.
ESD Control
Стандарты защиты от электростатического разряда для чувствительных компонентов.
RFQ checklist
Процесс заказа
Подтвердите ключевые данные закупки для SI2301BDS-T1-E3 до RFQ, выпуска PO и планирования отгрузки.
1
Подтвердить MPN
Укажите точный part number, производителя, package и approval constraints в RFQ.
2
Проверить склад и цену
Проверьте live availability, MOQ, lead time, финальную цену и налоговые условия до PO.
3
Согласовать документы
Подтвердите datasheet, CoC, traceability, lifecycle notes и scope инспекции, если требуется.
4
Организовать отгрузку
Выпустите PO и согласуйте DHL, FedEx, UPS или buyer forwarder shipment из Hong Kong.
Перед выпуском PO
Проверка детали
Точный MPN подтвержден: SI2301BDS-T1-E3
Корпус для проверки: SOT23
Коммерческие условия
Live stock и срок поставки подтверждены через RFQ
Финальная цена и налоговые условия подтверждены до выпуска PO
Отгрузка и документы
Ship-from location: склад Hong Kong
Способ доставки: DHL, FedEx, UPS или аккаунт экспедитора покупателя
Обзор продукта
Обзор
Проверьте sourcing context для SI2301BDS-T1-E3 от Vishay, включая идентификацию товара, применимость, package notes и закупочные детали.
The SI2301BDS-T1-E3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. This component is designed for various applications, including power management, switching, and amplification in electronic circuits. Below is a detailed description of its key features and specifications:
Key Features:
N-Channel Configuration: The SI2301BDS-T1-E3 is an N-channel MOSFET, which means it uses electrons as the charge carriers. This configuration typically offers lower on-resistance and higher efficiency compared to P-channel MOSFETs.
Low On-Resistance (RDS(on)): One of the standout features of this MOSFET is its low on-resistance, which minimizes power loss during operation. This characteristic is crucial for applications requiring high efficiency.
Voltage Rating: The device has a maximum drain-source voltage (VDS) rating, typically around 30V, making it suitable for low to medium voltage applications.
Current Rating: The SI2301BDS-T1-E3 can handle a continuous drain current (ID) of up to 3.9A at a specified temperature, allowing it to drive moderate loads effectively.
Gate Threshold Voltage (VGS(th)): The gate threshold voltage is relatively low, enabling the MOSFET to be driven by standard logic levels, which is beneficial for interfacing with microcontrollers and other digital logic devices.
Package Type: The MOSFET is housed in a compact SOT-23 package, which is ideal for space-constrained applications. This surface-mount package allows for easy integration into printed circuit boards (PCBs).
Thermal Performance: The device is designed to operate efficiently at elevated temperatures, with a specified maximum junction temperature (TJ) that allows for reliable performance in various environmental conditions.
Fast Switching Speed: The SI2301BDS-T1-E3 features fast switching capabilities, making it suitable for high-frequency applications, such as DC-DC converters and switching power supplies.
Applications: Common applications include load switching, power management in portable devices, motor control, and other general-purpose switching applications.
Electrical Characteristics (Typical Values):
VDS (Max): 30V
ID (Max): 3.9A
RDS(on): Typically around 0.045Ω at VGS = 10V
VGS(th): Typically between 1V to 2.5V
Package: SOT-23
Conclusion:
The SI2301BDS-T1-E3 from Vishay is a versatile and efficient N-channel MOSFET suitable for a wide range of electronic applications. Its low on-resistance, compact package, and ability to handle moderate voltages and currents make it an excellent choice for designers looking to optimize power efficiency and performance in their circuits.
Технические параметры
Параметры
Сравните сгруппированные параметры SI2301BDS-T1-E3 от Vishay, включая package, series, key attributes и technical values для engineering и sourcing review.
This code indicates the terminal finish material per JESD-609 standard. It helps identify the plating type for soldering compatibility and environmental compliance. Check the datasheet for the exact code and its meaning.
e3
Moisture Sensitivity Level (MSL)
Indicates the floor life of a component before it must be baked prior to soldering. Higher levels require stricter handling and shorter exposure times. Verify the MSL rating in the datasheet to ensure proper storage and assembly conditions.
1 (Unlimited)
REACH SVHC
Indicates whether the product contains substances of very high concern as per the REACH regulation. Buyers should verify this for compliance with EU environmental standards, especially when exporting to Europe. Check the manufacturer's declaration or datasheet for accurate SVHC status.
Unknown
RoHS Status
Indicates whether the component complies with the EU RoHS directive restricting hazardous substances. Buyers should verify this status for regulatory compliance and market access. Check the datasheet or certificate for exact compliance details.
ROHS3 Compliant
HTSUS
Harmonized Tariff Schedule of the United States code for customs classification. Essential for import/export documentation and duty calculation. Verify the correct code with a trade specialist to avoid customs delays.
8541.21.0095
ECCN Code
Export Control Classification Number assigned by the U.S. Commerce Department. It determines export licensing requirements for electronic components. Verify the ECCN against the manufacturer's datasheet or export compliance documentation before shipping internationally.
EAR99
SI2301BDS-T1-E3 Product Attribute
Параметр
Значение
Part Status
Lifecycle status of the part, such as active or obsolete. Indicates availability and long-term support from the manufacturer. Check this before design-in to avoid last-time buys or supply disruptions. Verify with the datasheet or distributor for current status.
Active
REACH Status
Shows whether the component complies with the EU REACH regulation. Essential for legal market access in Europe. Check the manufacturer's latest statement to confirm that no substances of very high concern are present above the threshold.
REACH Unaffected
ECCN
Export Control Classification Number assigned by the U.S. government. Determines whether the component requires an export license. Essential for international trade compliance. Verify the ECCN with the manufacturer or supplier before shipping to avoid legal issues.
EAR99
Lead Free
Indicates whether the component is manufactured without lead, complying with RoHS and similar regulations. Check this attribute to ensure environmental compliance for your market. Verify against the datasheet for exact material declarations.
Lead Free
Mounting Type
Specifies how the component is attached to the PCB, such as through-hole or surface mount. This affects assembly processes, thermal performance, and mechanical strength. Buyers should verify compatibility with their manufacturing capabilities and design requirements.
Surface Mount
Published
Published indicates the date when the product data was released or updated in the catalog. It helps buyers assess the freshness of the information and whether the component is current or possibly obsolete. Check the datasheet for the latest revisions.
2003
Factory Lead Time
Indicates the typical duration from order confirmation to shipment from the manufacturer's facility. This helps you plan production schedules and inventory. Verify current lead times with your distributor or supplier, as they may vary based on order quantity, product availability, and market conditions.
14 Weeks
Packaging
Indicates the form of delivery for the component, such as tape and reel, tube, or tray. This affects handling, storage, and assembly processes. Verify the packaging type matches your production requirements and equipment compatibility.
Tape & Reel (TR)
Terminal Position
Position of the terminals on the package, such as dual-in-line, gull-wing, or J-lead. This affects PCB layout, soldering, and thermal performance. Engineers must ensure the terminal position matches the footprint and assembly capabilities of their manufacturing line.
DUAL
Peak Reflow Temperature (Cel)
Maximum temperature during reflow soldering that the component can withstand. This is critical for solder joint reliability and preventing damage. Verify that the peak reflow temperature is compatible with your soldering profile and the component's moisture sensitivity level.
260
Terminal Form
Describes the physical configuration of the component's leads or pads, such as through-hole, surface mount, or gull-wing. This affects PCB layout, soldering process, and mechanical fit. Confirm compatibility with your assembly method and footprint.
GULL WING
Max Junction Temperature (Tj)
Specifies the highest temperature the semiconductor junction can sustain without damage or degradation. Compare this limit with your operating conditions and thermal management to ensure reliable performance. Verify against the datasheet for derating curves and long-term reliability.
150°C
Element Configuration
Describes the internal arrangement of components, such as resistor networks or switch contacts. This affects the circuit topology and pinout. Engineers must verify this configuration against the datasheet to ensure correct integration into the PCB layout and proper functionality.
Single
Manufacturer
Identifies the company that designed and produced the component. Buyers often filter by manufacturer to ensure brand reliability, quality standards, and supply chain consistency. Verify the manufacturer against the datasheet and official packaging to avoid counterfeit parts.
Vishay
Operating Mode
Specifies the functional mode of the component, such as continuous, pulsed, or burst. Engineers compare this to ensure the device operates correctly in their circuit topology. Verify the mode against the datasheet to match your application's requirements.
ENHANCEMENT MODE
Technology
Manufacturing technology or process used for the component, such as thin film, thick film, or semiconductor process. Affects performance, stability, and cost. Confirm the technology matches your application requirements and environmental conditions.
MOSFET (Metal Oxide)
Sub-Categories
Indicates the specific product subcategories or classifications within the broader component family. Helps narrow down search results and identify the exact type of component needed for your design. Review the subcategory to ensure compatibility with your application.
Transistors - FETs, MOSFETs - Single
Categories
Lists the product categories or classifications assigned to this component, such as connectors, capacitors, or modules. This helps in filtering and comparing similar parts. Review the categories to ensure the component fits your application and to find alternative parts in the same class.
Discrete Semiconductor Products
Transistor Element Material
Specifies the semiconductor material used in the transistor's active region. This affects electrical characteristics such as switching speed and voltage rating. Verify the material against the datasheet when selecting for high-frequency or high-power applications.
SILICON
Operating Temperature
Specifies the ambient temperature range within which the component reliably functions. Compare this with your application's thermal environment to ensure proper operation. Always verify against the datasheet for derating curves and maximum ratings.
-55°C~150°C TJ
FET Type
Classification of field-effect transistor based on channel polarity and mode, such as N-channel or P-channel, enhancement or depletion. This determines the required gate drive polarity and circuit topology. Engineers select the appropriate type for switching or amplification applications. Always confirm the exact type from the datasheet before design.
P-Channel
Subcategory
A more specific classification within the main product category, such as 'Ceramic Capacitor' under 'Capacitors'. This helps narrow down search results and compare similar components. Use it to filter products with similar characteristics and intended applications.
Other Transistors
Package / Case
Physical package or case type of the component, defining its dimensions, mounting style, and thermal characteristics. Common types include SMD, through-hole, BGA, and QFN. Choose the package that fits your PCB layout and assembly process. Verify the exact package code in the datasheet for footprint compatibility.
TO-236-3, SC-59, SOT-23-3
Series
Indicates the product series or family, grouping components with similar design and specifications. Helps identify compatible parts and compare within a product line. Verify the series against the datasheet to ensure correct application.
TrenchFET®
Height
Physical height of the component, measured from the mounting surface to the topmost point. This dimension is critical for clearance in compact assemblies and for ensuring proper fit within enclosures. Always verify against the datasheet for tolerance and mounting considerations.
1.12mm
Reflow Temperature-Max (s)
Maximum time the component can be exposed to the peak reflow temperature during soldering. Exceeding this duration may cause damage or degrade reliability. Ensure your soldering profile stays within this limit and check the datasheet for exact conditions.
30
Contact Plating
Specifies the metal coating applied to the contact surfaces of connectors, switches, or relays. This finish affects conductivity, corrosion resistance, and durability. Engineers should verify the plating material and thickness against the datasheet to ensure reliable performance in the intended environment.
Tin
Radiation Hardening
Indicates if the component is designed to withstand ionizing radiation in space, nuclear, or high-energy physics applications. Compare radiation-tolerant vs. radiation-hardened parts for mission-critical designs. Verify the total ionizing dose (TID) and single-event effect (SEE) ratings in the datasheet.
No
Mounting Type
Specifies how the component attaches to the PCB or assembly, such as surface mount, through-hole, or chassis mount. This affects soldering process, mechanical stability, and thermal performance. Verify compatibility with your board layout and assembly capabilities.
Surface Mount
Pb-Free Code
Indicates whether the component is lead-free per RoHS or other directives. Buyers use this to verify environmental compliance and avoid restricted substances. Always confirm with the datasheet or certificate of compliance.
yes
Number of Pins
Total number of pins or contacts on the component. This determines the footprint and mating connector requirements. Always match the pin count to your PCB layout and connector specification to ensure proper electrical and mechanical connection.
3
Pin Count
Total number of pins or terminals on the component package. Essential for footprint design, PCB layout, and connector mating. Verify against the datasheet to ensure compatibility with your board and assembly process.
3
Vgs (Max)
Maximum allowable gate-to-source voltage for a MOSFET. Exceeding this rating can permanently damage the gate oxide. Check the datasheet's absolute maximum ratings and ensure your drive circuit stays within this limit under all conditions.
±8V
Gate to Source Voltage (Vgs)
Voltage applied between gate and source terminals that controls the MOSFET's conduction. This rating defines the absolute maximum allowable voltage to prevent gate oxide breakdown. Check the threshold voltage and recommended drive levels in the datasheet for reliable switching.
8V
Drain to Source Breakdown Voltage
This is the maximum voltage the MOSFET can withstand between drain and source before breakdown occurs. Engineers compare it to ensure the device operates safely within the circuit's voltage rails. Always verify this value against the datasheet for your specific application.
-20V
Number of Terminations
Indicates the total number of electrical connection points on the component, such as pins or pads. This is critical for PCB footprint design and assembly. Verify it matches the package specification to ensure proper soldering and connectivity.
3
Width
Physical width of the component body, typically in millimeters. Essential for PCB footprint design and mechanical fit. Verify against the datasheet to ensure proper clearance and compatibility with your board layout and enclosure.
1.4mm
Power Dissipation
Maximum power the component can safely dissipate as heat without exceeding its thermal limits. Compare this rating with your application's expected power loss to ensure reliable operation. Always verify against the datasheet's derating curves and ambient temperature conditions.
700mW
Length
Specifies the physical length of the component body, typically in millimeters. This dimension is critical for PCB layout and mechanical fit. Verify against the datasheet to ensure proper clearance and alignment in your design.
3.04mm
Drive Voltage (Max Rds On, Min Rds On)
Gate-to-source voltage levels that produce the specified maximum and minimum on-resistance values. This helps designers select appropriate gate drive circuits and logic levels. Check the datasheet's transfer characteristics to ensure the MOSFET fully enhances at your operating voltage.
2.5V 4.5V
Fall Time (Typ)
Typical time for the output signal to transition from 90% to 10% of its amplitude. This parameter indicates switching speed and affects high-frequency performance. Compare with rise time and verify against the datasheet for your specific operating conditions.
40 ns
Resistance
Electrical resistance value in ohms, defining opposition to current flow. Critical for current limiting, voltage division, and signal conditioning. Always check tolerance and power rating in the datasheet for reliable circuit operation.
100mOhm
Weight
Specifies the physical weight of the electronic component, important for logistics, shipping cost, and mechanical design. Verify the exact weight in the datasheet or packaging information, as it may vary with packaging type and quantity.
1.437803g
Gate Charge (Qg) (Max) @ Vgs
This is the total charge required to switch the MOSFET gate to a specified gate-source voltage. It determines switching speed and driver power losses. Compare values to optimize efficiency in high-frequency circuits. Verify against datasheet for your operating conditions.
10nC @ 4.5V
Maximum Power Dissipation
Indicates the highest power the component can safely dissipate as heat without exceeding its thermal limits. Compare this value with your circuit's expected power loss to ensure reliable operation. Always verify against the datasheet's derating curves for elevated ambient temperatures.
700mW Ta
Continuous Drain Current (Id) @ 25°C
Maximum continuous current the MOSFET can conduct at 25°C case temperature. This rating determines thermal performance and suitability for power applications. Verify against the datasheet's safe operating area and derating curves for reliable operation.
2.2A Ta
Continuous Drain Current (ID)
Maximum continuous current the MOSFET can conduct in the on-state without exceeding thermal limits. Compare this rating with your circuit's peak and average current demands. Always verify against the datasheet's thermal resistance and ambient temperature conditions.
-2.2A
Manufacturer's Part No.
The unique part number assigned by the original component manufacturer. Use this to cross-reference datasheets, verify specifications, and ensure the exact component matches your design requirements. Always confirm the number against the manufacturer's official documentation.
SI2301BDS-T1-E3
Vgs(th) Max @ Id
Maximum gate threshold voltage at a specified drain current. This parameter indicates the gate voltage needed to begin conduction. Compare it with your gate drive voltage to ensure reliable switching. Verify against the datasheet for your operating conditions.
950mV @ 250μA
Rds On (Max) @ Id, Vgs
Maximum drain-source on-resistance measured at a specified drain current and gate-source voltage. Lower values reduce conduction losses in power circuits. Compare this parameter when selecting MOSFETs for efficiency and thermal performance, and verify against the datasheet.
100m Ω @ 2.8A, 4.5V
Threshold Voltage
The minimum gate-to-source voltage that makes the device start conducting. Compare this value across parts to ensure your drive circuit can reliably turn the switch on. Always verify against the datasheet for your operating temperature.
-950mV
Input Capacitance (Ciss) (Max) @ Vds
Maximum input capacitance of the MOSFET at a specified drain-source voltage. This value affects switching speed and gate drive requirements. Compare across devices to estimate switching losses and driver capability. Always verify against the datasheet for your operating conditions.
375pF @ 6V
Nominal Vgs
Nominal gate-to-source voltage for MOSFETs and other FETs. This value indicates the typical voltage bias required for intended operation. Engineers compare it with threshold voltage and drive conditions to ensure proper switching and to avoid overvoltage damage. Always verify against the datasheet's absolute maximum ratings.
-950 mV
SI2301BDS-T1-E3 Product Parameter
Параметр
Значение
Number of Channels
Specifies how many independent signal paths or outputs the component provides. Compare this value with your circuit requirements to ensure each channel can be used separately. Verify the channel configuration in the datasheet, as some devices may share pins or have internal connections.
1
Number of Elements
Indicates how many independent functional sections are integrated into a single component package. This matters when comparing multi-channel devices or resistor networks. Always verify the exact element count against the datasheet to ensure it matches your circuit design requirements.
1
Turn On Delay Time
Time from when the input signal crosses its threshold until the output begins to turn on. This parameter affects switching speed and power dissipation in high-frequency circuits. Verify it against the datasheet for your specific load and drive conditions.
20 ns
Drain to Source Voltage (Vdss)
Maximum voltage that can be applied between drain and source terminals without causing breakdown. Critical for MOSFET selection in power circuits. Verify against datasheet for safe operating area and derating.
20V
Turn-Off Delay Time
Measures the time from when the turn-off command is applied to when the device actually begins to switch off. This delay affects switching losses and timing in power circuits. Engineers compare this parameter to ensure proper synchronization and to minimize power dissipation during high-frequency operation.
30 ns
Rise Time
Time required for a signal to transition from a low to a high level, typically measured between 10% and 90% of the amplitude. Important for digital interfaces, switching regulators, and pulse circuits. Check the datasheet for test conditions and load capacitance.
40ns
Предпросмотр datasheet
Datasheet PDF viewer
Просмотрите datasheet для SI2301BDS-T1-E3 от Vishay, чтобы проверить package, electrical characteristics, application notes и document evidence до RFQ.
Для SI2301BDS-T1-E3 сейчас не показан публичный product notice document. Подтвердите PCN, PDN, EOL, date code и lifecycle status во время RFQ до производственной закупки.
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Точные ответы для покупателей, которые проверяют ordering code SI2301BDS-T1-E3, упаковку, наличие, datasheet и путь замены.
Что означает SI2301BDS-T1-E3?
SI2301BDS-T1-E3 — это точный ordering code для компонента категории Transistors - FETs, MOSFETs - Single от Vishay. Текущий корпус указан как SOT23, а контекст позиции включает MOSFET P-CH 20V 2.2A SOT23-3. Используйте полный код при запросе склада, цены, datasheet или compliance-подтверждения.
Как покупателям проверить ordering code SI2301BDS-T1-E3?
Рассматривайте SI2301BDS-T1-E3 как полный ordering code при RFQ и инженерной проверке. Подтвердите указанный корпус SOT23, документацию производителя Vishay, ordering table в datasheet, reel или packing details и требования внутреннего утверждения до замены или выпуска PO.
В каком корпусе поставляется SI2301BDS-T1-E3?
SI2301BDS-T1-E3 сейчас указан с корпусом SOT23 от Vishay. Перед утверждением закупки подтвердите manufacturer package drawing, footprint, pinout, tape-and-reel данные и требования к приемке.
SI2301BDS-T1-E3 сейчас доступен для заказа?
SI2301BDS-T1-E3 сейчас помечен на странице как позиция с наличием. Перед заказом подтвердите корпус (SOT23), указанный склад (65289), доступное количество (93094), нужное количество, срок поставки, финальную цену, compliance-требования и совпадение точного ordering code через RFQ.
Где сравнить альтернативы для SI2301BDS-T1-E3?
Для SI2301BDS-T1-E3 сейчас не опубликован список связанных альтернатив. Отправьте RFQ с количеством, ограничениями по корпусу и требованиями к утверждению, чтобы TrustCompo помогла проверить возможные replacement options.