NUP4114HMR6T1G TVS - Диоды от ON Semiconductor

The NUP4114HMR6T1G is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. MOSFETs are commonly used as switching devices in electronic circuits, controlling the flow of current based on the voltage applied to the gate terminal.

Key Features:

• Type: P-channel MOSFET (Enhancement Mode)
• Drain-Source Voltage: -20V
• Continuous Drain Current: -2.3A
• Low On-Resistance: Provides efficient current flow with minimal voltage drop when fully turned on.
• Fast Switching Speed: Enables rapid switching between on and off states, suitable for high-frequency applications.
• Small Form Factor Package: Available in a compact and surface-mountable package for easy integration into circuit designs.
• RoHS Compliant: Complies with environmental standards for the Restriction of Hazardous Substances, ensuring environmental safety.
• Lead-Free: Contains no lead in its construction, meeting lead-free soldering requirements for modern electronics manufacturing.

Applications: 

• Power management circuits: Used to control the flow of current in battery management systems, voltage regulators, and DC-DC converters.
• Load switching: Employed in load switch circuits to selectively turn on or off loads such as LEDs, motors, and solenoids.
• Power distribution: Integrated into power distribution systems for reverse polarity protection and circuit isolation.
• Battery charging: Utilized in battery charging circuits to regulate the charging current and protect against overcurrent conditions.
• Signal switching: Used as switches in signal routing circuits and analog switches in audio and video applications.
• Voltage level translation: Applied in level-shifting circuits to interface between devices operating at different voltage levels.