Поставка оригинальных IRF7342TRPBF, Транзисторы - Полевые, МОП-транзисторы - Массивы, от Infineon Technologies

The IRF7342TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for high-efficiency power management applications, making it suitable for a variety of uses in power supplies, motor control, and other electronic circuits.

Key Features:

1. Type: N-channel MOSFET
2. Package: The device is typically housed in a TO-220 package, which provides good thermal performance and is suitable for mounting on heatsinks.
3. Voltage Rating: The IRF7342TRPBF has a maximum drain-source voltage (V_DS) rating of 40V, allowing it to handle a wide range of applications without risk of breakdown.
4. Current Rating: It can handle continuous drain currents (I_D) of up to 50A, making it capable of driving high loads efficiently.
5. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.025 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing overall efficiency.
6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically between 2V to 4V, which allows for easy interfacing with low-voltage control signals.
7. Switching Speed: The IRF7342TRPBF features fast switching capabilities, which is essential for applications requiring rapid on/off control, such as in PWM (Pulse Width Modulation) circuits.
8. Thermal Characteristics: The device has a high thermal conductivity, allowing it to dissipate heat effectively. It has a maximum junction temperature (T_J) rating of 175°C, which provides a robust operating range.
9. Applications: Common applications include DC-DC converters, power inverters, motor drivers, and other high-frequency switching applications.

Electrical Characteristics:

• Gate-Source Voltage (V_GS): Maximum ±20V
• Drain-Source Breakdown Voltage (V(BR)DSS): 40V
• Total Gate Charge (Q_g): Typically around 30 nC, which influences the drive requirements for the gate.
• Body Diode Characteristics: The IRF7342TRPBF includes an intrinsic body diode, which allows for reverse current flow and can be beneficial in certain applications.

Reliability and Compliance:

The IRF7342TRPBF is designed to meet stringent quality and reliability standards, making it suitable for automotive and industrial applications. It is also RoHS compliant, ensuring that it is free from hazardous substances.

Conclusion:

The IRF7342TRPBF from Infineon Technologies is a versatile and efficient N-channel MOSFET that is well-suited for a variety of power management applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it an excellent choice for engineers looking to optimize their designs for performance and efficiency.