Поставка оригинальных LE25S40MB-AH, Память, от ON Semiconductor

Features
• Data EEPROM internally organized as 128/256 bytes and 16/32 pages × 8 bytes
• Page protection mode, flexible page-by-page hardware write protection
– Additional protection EEPROM of 16/32 bits, 1 bit per data page
– Protection setting for each data page by writing its protection bit
– Protection management without switching WP pin
• Low power CMOS
• VCC = 2.7 to 5.5 V operation
• Two wire serial interface bus, I2C-Bus compatible
• Filtered inputs for noise suppression with Schmitt trigger
• Clock frequency up to 400 kHz
• High programming flexibility
– Internal programming voltage
– Self timed programming cycle including erase
– Byte-write and page-write programming, between 1 and 8 bytes
– Typical programming time 5 ms for up to 8 bytes
• High reliability
– Endurance 106 cycles1)
– Data retention 40 years1)
– ESD protection 4000 V on all pins
• 8 pin DIP/DSO packages
• Available for extended temperature ranges
– Industrial: − 40 °C to + 85 °C
– Automotive: − 40 °C to + 125 °C