Поставка оригинальных FDP075N15A-F102, Транзисторы - Полевые транзисторы, MOSFET - Одиночные, от ON Semiconductor

The FDP075N15A-F102 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This component is designed for high-efficiency power management applications, making it suitable for various uses in power supplies, motor drives, and other electronic circuits.

Key Features:

1. Type: N-channel MOSFET
2. Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 150V, allowing it to handle high-voltage applications effectively.
3. Current Rating: It can handle a continuous drain current (I_D) of up to 75A, which makes it capable of managing significant power loads.
4. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.075 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses and improved efficiency during operation.
5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 2V to 4V, which indicates the voltage required to turn the MOSFET on.
6. Package Type: The FDP075N15A-F102 is available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.
7. Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, allowing for effective heat management during operation.
8. Switching Speed: The device is designed for fast switching applications, making it ideal for use in high-frequency circuits.

Applications:

• Power Supplies: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
• Motor Control: Suitable for driving motors in various applications, including industrial automation and robotics.
• DC-DC Converters: Commonly used in buck and boost converters for efficient power conversion.
• Inverters: Utilized in inverter circuits for renewable energy systems, such as solar inverters.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V, ensuring safe operation within specified limits.
• Maximum Power Dissipation (P_D): The device can dissipate a significant amount of power, typically around 94W, depending on the thermal management in the application.

Conclusion:

The FDP075N15A-F102 from ON Semiconductor is a robust and efficient N-channel MOSFET that is well-suited for high-power applications. Its combination of high voltage and current ratings, low on-resistance, and fast switching capabilities make it a versatile choice for engineers looking to design reliable and efficient electronic systems.