FDD18N20LZ Транзисторы - Полевые транзисторы, MOSFET - Одиночные от ON Semiconductor

The FDD18N20LZ is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-efficiency power switching applications, making it suitable for various uses in power management, motor control, and other electronic circuits.

Key Features:

1. Voltage Rating: The FDD18N20LZ has a maximum drain-source voltage (V_DS) of 200V, which allows it to handle high-voltage applications effectively.

2. Current Rating: It can handle a continuous drain current (I_D) of up to 18A, making it capable of driving substantial loads.

3. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.1 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses during operation, enhancing overall efficiency.

4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, which allows for easy interfacing with low-voltage control signals.

5. Package Type: The FDD18N20LZ is typically housed in a TO-220 package, which provides good thermal performance and allows for easy mounting on heat sinks for effective heat dissipation.

6. Thermal Characteristics: The device has a maximum junction temperature (T_J) rating of 150°C, which provides a robust operating range for various applications.

7. Fast Switching Speed: The FDD18N20LZ is designed for fast switching applications, which is beneficial in reducing switching losses in high-frequency applications.

8. Applications: Common applications include power supplies, DC-DC converters, motor drivers, and other power management systems where efficient switching is critical.

Electrical Characteristics:

• Gate-Source Voltage (V_GS): ±20V maximum
• Drain-Source Breakdown Voltage (V(BR)DSS): 200V minimum
• Total Gate Charge (Q_g): Typically around 30nC, which indicates the amount of charge required to turn the MOSFET on and off.

Summary:

The FDD18N20LZ from ON Semiconductor is a versatile and efficient N-channel MOSFET suitable for a wide range of power applications. Its high voltage and current ratings, combined with low on-resistance and fast switching capabilities, make it an excellent choice for designers looking to optimize performance in power electronics. The TO-220 package ensures good thermal management, making it a reliable component in demanding environments.