IRFP140PBF Транзисторы - Полевые транзисторы, MOSFET - Одиночные от Vishay

The IRFP140PBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. It is designed for use in a variety of applications, including power management, motor control, and switching power supplies.

Key Features:

1. Voltage Rating: The IRFP140PBF has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.

2. Current Rating: It can handle a continuous drain current (I_D) of up to 50A at a temperature of 25°C, which allows it to manage significant power loads.

3. R_DS(on): The on-resistance (R_DS(on)) is typically around 0.04 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses and improved efficiency during operation.

4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, which means it begins to conduct at relatively low gate voltages, allowing for easier drive requirements.

5. Package Type: The IRFP140PBF is available in a TO-220 package, which provides good thermal performance and is easy to mount on heatsinks for effective heat dissipation.

6. Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, which helps in maintaining lower operating temperatures during high-load conditions.

7. Fast Switching: The device is designed for fast switching applications, making it suitable for high-frequency operation in power converters and inverters.

8. RoHS Compliant: The IRFP140PBF is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring it is free from certain hazardous materials.

Applications:

• Power Supplies: Used in switch-mode power supplies (SMPS) for efficient power conversion.
• Motor Drives: Suitable for driving DC motors and other inductive loads.
• Class D Amplifiers: Commonly used in audio amplifiers for efficient signal amplification.
• Battery Management Systems: Employed in systems that require efficient switching for battery charging and discharging.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Pulsed Drain Current (I_D, pulsed): 160A
• Total Gate Charge (Q_g): Approximately 67 nC at V_GS = 10V, which indicates the amount of charge required to turn the MOSFET on.

Conclusion:

The IRFP140PBF from Vishay is a robust and efficient N-channel MOSFET that is well-suited for a variety of high-power applications. Its combination of high voltage and current ratings, low on-resistance, and fast switching capabilities make it a popular choice among engineers and designers in the power electronics field.