Поставка оригинальных BAT54HT1G, Diodes - Rectifiers - Single, от ON Semiconductor

Поставка оригинальных BAT54HT1G, Diodes - Rectifiers - Single, от ON Semiconductor | TrustCompo Electronic

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Номер детали
BAT54HT1G
Внутренний код
TCE000011914
Упаковка
SOD323
Серия
-
Основные характеристики
-
Описание
DIODE SCHOTTKY 30V 200MA SOD323
Минимальное количество
1
Производитель
ON Semiconductor
Категория
Discrete Semiconductor Products
Подкатегория
Diodes - Rectifiers - Single
Техническое описание
-

Доступность

В наличии89,081
Доступно271,831

Диапазон цен

КачествоЦена за единицу
1
10
30
100
500
1,000

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Оперативная поддержка 24/7
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Политика возврата в течение 30 дней

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Обзор

The BAT54HT1G is a Schottky barrier diode manufactured by ON Semiconductor, designed for various applications requiring low forward voltage drop and fast switching speeds. Here’s a detailed description of its key features and specifications:

General Description:

The BAT54HT1G is a small-signal Schottky diode that is particularly well-suited for use in high-speed switching applications, such as in RF and microwave circuits, as well as in power management systems. Its low forward voltage drop makes it ideal for applications where efficiency is critical.

Package:

The BAT54HT1G is typically available in a SOT-23 package, which is a compact, surface-mount package that allows for easy integration into printed circuit boards (PCBs). The SOT-23 package has three terminals, making it suitable for various configurations in electronic circuits.

Electrical Characteristics:

  • Forward Voltage Drop (Vf): The BAT54HT1G features a low forward voltage drop, typically around 0.3V at a forward current of 1mA. This characteristic helps minimize power loss during operation.
  • Reverse Voltage (Vr): The diode has a maximum reverse voltage rating of 30V, making it suitable for applications that require blocking high reverse voltages.
  • Forward Current (If): The maximum forward current rating is typically around 200mA, allowing it to handle moderate current levels in various applications.
  • Reverse Leakage Current (Ir): The reverse leakage current is low, typically in the microamp range, which is beneficial for battery-powered devices and low-power applications.

Performance:

The BAT54HT1G exhibits fast switching speeds, making it ideal for high-frequency applications. Its low capacitance also contributes to its performance in RF applications, where signal integrity is crucial.

Applications:

  • RF and Microwave Circuits: Used in signal detection and mixing applications due to its fast response time.
  • Power Management: Suitable for use in power supply circuits, where efficiency and low voltage drop are essential.
  • Rectification: Can be used in low-voltage rectification applications, such as in power adapters and chargers.
  • Clamping and Protection: Effective in clamping applications to protect sensitive components from voltage spikes.

Conclusion:

The BAT54HT1G from ON Semiconductor is a versatile Schottky diode that combines low forward voltage drop, fast switching capabilities, and compact packaging, making it an excellent choice for a wide range of electronic applications. Its reliability and efficiency make it a popular choice among engineers and designers in the electronics industry.

Product Attribute

Contact Plating
Tin
Part Status
Active
Radiation Hardening
NO
Number of Terminations
2
Pin Count
2
Number of Pins
2
Pbfree Code
Yes
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Voltage - Rated DC
30V
Min Operating Temperature
-55°C
Factory Lead Time
8 Weeks
Published
2005
Reflow Temperature-Max (s)
40
Series
-
Height
1mm
Length
1.8mm
Packaging
Cut Tape (CT)
Width
1.35mm
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Max Operating Temperature
150°C
Element Configuration
Single
Current Rating
200mA
Output Current
200mA
Polarity
Standard
Power Dissipation
200mW
Manufacturer
ON Semiconductor
Recovery Time
5 ns
Categories
Discrete Semiconductor Products
Package / Case
SC-76, SOD-323
Subcategory
Rectifier Diodes
Sub-Categories
Diodes - Rectifiers - Single
HTS Code
8541.10.00.70
Additional Feature
EXTREMELY FAST SWITCHING SPEED
Current - Average Rectified (Io)
200mA DC
Capacitance @ Vr, F
10pF @ 1V 1MHz
Base Part Number
BAT54H
Manufacturer's Part No.
BAT54HT1G

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.10.0070

Product Parameter

Number of Elements
1
Breakdown Voltage
30V
Reverse Voltage
30V
Max Reverse Voltage (DC)
30V
Max Repetitive Reverse Voltage (Vrrm)
30V
Forward Current
200mA
Average Rectified Current
200mA
Peak Reverse Current
2μA
Max Reverse Leakage Current
2μA
Reverse Recovery Time
5 ns
Capacitance
10pF
Max Forward Surge Current (Ifsm)
600mA
Max Surge Current
600mA
Peak Non-Repetitive Surge Current
600mA
Diode Element Material
SILICON
Forward Voltage
800mV
Diode Type
Schottky
Operating Temperature - Junction
-55°C~150°C
Current - Reverse Leakage @ Vr
2μA @ 25V
Voltage - Forward (Vf) (Max) @ If
800mV @ 100mA
Speed
Small Signal =< 200mA (Io), Any Speed

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