Поставка оригинальных FDN5618P, Transistors - FETs, MOSFETs - Single, от ON Semiconductor

The FDN5618P is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for various applications, including power management, switching, and signal amplification. Here’s a detailed description of its features and specifications:

Package and Configuration

• Package Type: The FDN5618P is typically housed in a compact SOT-23 package, which is a surface-mount device (SMD) that allows for efficient space utilization on printed circuit boards (PCBs).
• Pin Configuration: The device features three pins for each MOSFET, allowing for easy integration into circuits. The pinout is designed for straightforward connections, facilitating both source and drain access.

Electrical Characteristics

• N-Channel Configuration: As an N-channel MOSFET, the FDN5618P is optimized for low on-resistance and high-speed switching capabilities, making it suitable for low-side switching applications.
• Drain-Source Voltage (V_DS): The maximum drain-source voltage is typically rated at around 30V, allowing it to handle a variety of voltage levels in different applications.
• Continuous Drain Current (I_D): The device can handle a continuous drain current of up to 1.5A, making it suitable for moderate power applications.
• On-Resistance (R_DS(on)): The on-resistance is low, typically around 0.1 ohms at a gate-source voltage (V_GS) of 10V, which minimizes power loss during operation and enhances efficiency.

Thermal Characteristics

• Thermal Resistance: The FDN5618P has a thermal resistance rating that allows it to operate effectively without overheating, making it suitable for applications where heat dissipation is a concern.
• Operating Temperature Range: The device is designed to operate within a wide temperature range, typically from -55°C to +150°C, ensuring reliability in various environmental conditions.

Switching Performance

• Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 1V to 3V, allowing for efficient switching with low gate drive requirements.
• Fast Switching Speed: The FDN5618P is capable of fast switching speeds, making it ideal for high-frequency applications such as PWM (Pulse Width Modulation) control.

Applications

The FDN5618P is suitable for a variety of applications, including:

• Power management circuits
• Load switching
• Motor control
• Battery management systems
• Signal switching in communication devices

Summary

In summary, the FDN5618P from ON Semiconductor is a versatile and efficient dual N-channel MOSFET that offers low on-resistance, high current handling, and fast switching capabilities. Its compact SOT-23 package and robust electrical characteristics make it an excellent choice for a wide range of electronic applications, particularly in power management and control systems.