Поставка оригинальных FDS6681Z, Транзисторы - Полевые транзисторы, MOSFET - Одиночные, от ON Semiconductor

The FDS6681Z is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-efficiency power management applications, particularly in DC-DC converters, load switching, and other power-related circuits.

Key Features:

1. Configuration: The FDS6681Z features a dual configuration, meaning it contains two N-channel MOSFETs in a single package. This allows for compact designs and efficient use of board space.

2. Package Type: It is typically housed in a compact SO-8 (Small Outline 8-lead) package, which is surface-mountable. This package type is advantageous for automated assembly processes and helps in reducing the overall footprint on the PCB.

3. Voltage Rating: The FDS6681Z has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.

4. Current Rating: The device can handle continuous drain currents of up to 20A, depending on the thermal conditions and PCB layout. This high current capability makes it suitable for applications requiring significant power handling.

5. R_DS(on): One of the critical specifications of the FDS6681Z is its low on-resistance (R_DS(on)), which is typically around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced conduction losses, enhancing overall efficiency.

6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 1V to 2.5V, allowing for easy drive from standard logic levels.

7. Thermal Performance: The FDS6681Z is designed to provide good thermal performance, with a maximum junction temperature (T_J) rating of 150°C. This allows for reliable operation in demanding environments.

8. Applications: Common applications for the FDS6681Z include synchronous rectification in power supplies, battery management systems, and motor control circuits. Its dual configuration also makes it suitable for H-bridge designs and other applications where space-saving is critical.

Electrical Characteristics:

• V_DS (Max): 30V
• I_D (Continuous): 20A
• R_DS(on): ~10 mΩ at V_GS = 10V
• V_GS(th): 1V to 2.5V
• T_J (Max): 150°C

Conclusion:

The FDS6681Z from ON Semiconductor is a versatile and efficient dual N-channel MOSFET that is well-suited for a variety of power management applications. Its low on-resistance, high current handling capability, and compact package make it an excellent choice for designers looking to optimize performance while minimizing space on their PCBs.