MX25L6436EM2I-10G Память от Macronix

GENERAL
The MX25L1605D are 16,777,216 bit serial Flash memory, which is configured as 2,097,152 x 8 internally. When it is in two I/O read mode, the structure becomes 8,388,608 bits x 2.
The MX25L3205D are 33,554,432 bit serial Flash memory, which is configured as 4,194,304 x 8 internally. When it is in two I/O read mode, the structure becomes 16,772,216 bits x 2.
The MX25L6405D are 67,108,864 bit serial Flash memory, which is configured as 8,388,608 x 8 internally. When it is in two I/O read mode, the structure becomes 33,554,432 bits x 2. (please refer to the "Two I/O Read mode" section).
The MX25L1605D/3205D/6405D feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus.
The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access to the device is enabled by CS# input.
FEATURES GENERAL
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
• 16M:16,777,216 x 1 bit structure or 8,388,608 x 2 bits (two I/O read mode) structure 32M:33,554,432 x 1 bit structure or 16,772,216 x 2 bits (two I/O read mode) structure 64M:67,108,864 x 1 bit structure or 33,554,432 x 2 bits (two I/O read mode) structure
• 512 Equal Sectors with 4K byte each (16Mb) 1024 Equal Sectors with 4K byte each (32Mb) 2048 Equal Sectors with 4K byte each (64Mb) - Any Sector can be erased individually
• 32 Equal Blocks with 64K byte each (16Mb) 64 Equal Blocks with 64K byte each (32Mb) 128 Equal Blocks with 64K byte each (64Mb) - Any Block can be erased individually
• Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
• Low Vcc write inhibit is from 1.5V to 2.5V PERFORMANCE
• High Performance - Fast access time: 86MHz serial clock (15pF + 1TTL Load) and 66MHz serial clock (30pF + 1TTL Load) - Serial clock of two I/O read mode : 50MHz (15pF + TTL Load), which is equivalent to 100MHz - Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page) - Byte program time: 9us (typical) - Continuously program mode (automatically increase address under word program mode) - Fast erase time: 60ms(typ.) /sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 14s(typ.) /chip for 16Mb, 25s(typ.) for 32Mb, and 50s(typ.) for 64Mb
• Low Power Consumption - Low active read current: 25mA(max.) at 86MHz, 20mA(max.) at 66MHz and 10mA(max.) at 33MHz - Low active programming current: 20mA (max.) - Low active erase current: 20mA (max.) - Low standby current: 20uA (max.) - Deep power-down mode 1uA (typical)
• Typical 100,000 erase/program cycles