Поставка оригинальных MX29F400CTMI-70G, Память, от Macronix

GENERAL MX25L6445E is 67,108,864 bits serial Flash memory, which is confgured as 8,388,608 x 8 internally. When it is in two or four I/O mode, the structure becomes 33,554,432 bits x 2 or 16,777,216 bits x 4.
The MX25L6445E features a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus.
The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access to the device is enabled by CS# input.MX25L6445E provides high performance read mode, which may latch address and data on both rising and falling edge of clock. By using this high performance read mode, the data throughput may be doubling. Moreover, the performance may reach direct code execution, the RAM size of the system may be reduced and further saving system cost.
FEATURESGENERAL
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
• 64Mb: 67,108,864 x 1 bit structure or 33,554,432 x 2 bits (two I/O mode) structure or 16,777,216 x 4 bits (four I/O mode) structure
• 2048 Equal Sectors with 4K bytes each - Any Sector can be erased individually
• 256 Equal Blocks with 32K bytes each - Any Block can be erased individually
• 128 Equal Blocks with 64K bytes each - Any Block can be erased individually
• Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1VPERFORMANCE
• High Performance VCC = 2.7~3.6V - Normal read - 50MHz - Fast read (Normal Serial Mode) - 1 I/O: 104MHz with 8 dummy cycles - 2 I/O: 70MHz with 4 dummy cycles - 4 I/O: 70MHz with 6 dummy cycles - Fast read (Double Transfer Rate Mode) - 1 I/O: 50MHz with 6 dummy cycles - 2 I/O: 50MHz with 6 dummy cycles - 4 I/O: 50MHz with 8 dummy cycles - Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page) - Byte program time: 9us (typical) - Continuously Program mode (automatically increase address under word program mode) - Fast erase time: 60ms (typ.)/sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 50s(typ.) /chip
• Low Power Consumption - Low active read current: 19mA(max.) at 104MHz, 15mA(max.) at 66MHz and 10mA(max.) at 33MHz - Low active programming current: 25mA (max.) - Low active erase current: 25mA (max.) - Low standby current: 50uA (max.) - Deep power down current: 20uA (max.)
• Typical 100,000 erase/program cycles
• 20 years data retentionSOFTWARE
FEATURES
• Input Data Format - 1-byte Command code